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DMJT9435
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
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Features
* * * * * Ideally Suited for Automated Assembly Processes Low Collector-Emitter Saturation Voltage Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2)
Mechanical Data
* * * * * * *
COLLECTOR 2,4
NEW PRODUCT
Case: SOT-223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish -- Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.115 grams (approximate)
3E C4 2C 1B
Pin Out Configuration
1 BASE 3 EMITTER
Top View Device Schematic
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO ICM IC IB Value -45 -30 -6 -5 -3 -1 Unit V V V A A A
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Continuous Base Current
Thermal Characteristics
Characteristic Power Dissipation (Note 3) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25C Power Dissipation (Note 4) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25C Power Dissipation @ TC = 25C Thermal Resistance, Junction to Case @ TC = 25C Operating and Storage Temperature Range
Notes: 1. 2. 3. 4.
Symbol PD RJA PD RJA PD RJA TJ, TSTG
Value 1.2 104 2 62.5 3 42 -55 to +150
Unit W C/W W C/W W C/W C
No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum recommended pad layout. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
DMJT9435
Document number: DS31622 Rev. 2 - 2
1 of 4 www.diodes.com
December 2008
(c) Diodes Incorporated
DMJT9435 Electrical Characteristics
@TA = 25C unless otherwise specified Symbol V(BR)CEO V(BR)EBO ICER IEBO Min -30 -6 125 110 90 Typ -100 -250 83 160 45 140 200 90 110 155 100 55 Max -20 -200 -10 -210 -275 -550 183 -1.25 -1.1 150 Unit V V A A A Test Conditions IC = -10mA IE = -50A VCB = -25V, RBE = 200 VCB = -25V, RBE = 200, TA = 125C VEB = -5V, IC = 0 VCE = -1V, IC = -0.8A VCE = -1V, IC = -1.2A VCE = -1V, IC = -3A IC = -0.8A, IB = -20mA IC = -1.2A, IB = -20mA IC = -3A, IB = -300mA IC = -3.0A, IB = -300mA IC = -3A, IB = -300mA VCE = -4V, IC = -1.2A VCE = -10V, IC = -100mA, f = 100MHz VCB = -10V, f = 1MHz VEB = -8V, f = 1MHz VCC = -15V, IC = -1.2A, IB1 = -20mA VCC = -15V, IC = -1.2A, IB1 = IB2 = -20mA
Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage
NEW PRODUCT
Collector-Base Cutoff Current Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain
hFE
Collector-Emitter Saturation Voltage Equivalent On-Resistance Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage SMALL SIGNAL CHARACTERISTICS Transition Frequency Output Capacitance Input Capacitance SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time
Notes:
VCE(SAT) RCE(SAT) VBE(SAT) VBE(ON) fT Cobo Cibo ton td tr toff ts tf
mV m V V MHz pF pF ns ns ns ns ns ns
5. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.
2.0
1.0
-IC, COLLECTOR CURRENT (A)
PD, POWER DISSIPATION (W)
1.6
0.8
IB = -5mA
1.2
Note 4
0.6
IB = -4mA
IB = -3mA
0.8
0.4
IB = -2mA
0.4
Note 3
0.2
IB = -1mA
0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature
0 0 4 8 12 16 20
-VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
DMJT9435
Document number: DS31622 Rev. 2 - 2
2 of 4 www.diodes.com
December 2008
(c) Diodes Incorporated
DMJT9435
1,000
VCE = -1V
10
IC/IB = 10
T A = 150C
-VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
1
TA = 85C TA = 25C
TA = 150C
NEW PRODUCT
100
TA = -55C
0.1
TA = 85C T A = 25C T A = -55C
0.01
10 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current 1
0.001 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current
IC/IB = 10
VCE = -4V
1.0
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
1.2
1.0
0.8
TA = -55C
0.8
T A = -55C
0.6
T A = 25C
0.6
TA = 25C TA = 85C TA = 150C
0.4
T A = 85C
0.4
0.2
TA = 150C
0.2 0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current
0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current
f = 1MHz
1,000
1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz)
CAPACITANCE (pF)
100
100
Cibo
10
Cobo
10
VCE = -10V f = 100MHz
1 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics
1 0 10 20 30 40 50 60 70 80 90 100 -IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current
DMJT9435
Document number: DS31622 Rev. 2 - 2
3 of 4 www.diodes.com
December 2008
(c) Diodes Incorporated
DMJT9435 Ordering Information
Part Number DMJT9435-13
Notes:
(Note 6) Case SOT-223 Packaging 2500/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
NEW PRODUCT
Marking Information
YWW ZPS33
ZPS33 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2008) WW = Week code 01 - 52
Package Outline Dimensions
SOT-223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e -- -- 4.60 e1 -- -- 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm
A A1
Suggested Pad Layout
X1 Y1
C1
Y2 C2 X2
Dimensions X1 X2 Y1 Y2 C1 C2
Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DMJT9435
Document number: DS31622 Rev. 2 - 2
4 of 4 www.diodes.com
December 2008
(c) Diodes Incorporated

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